SEMILITH - Technical Details

Engineered specifically legacy node FEOL compatibility, SEMILITH undergoes rigorous refining in order to lower alkali trace metals to single digit ppb levels.

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Other than the material purity, we have also engineered the carrier matrix to form self assembled monolayers with the help of an industry standard APTES coating. After which a simple 400 degree Celsius vacuum bakeout will yield a non covalent bonded ballistic semiconducting monolayer.

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Material Characteristics:

• Purity: >99.999% Semiconducting SWCNTs

  • (<0.001% metallic nanotube content, verified via area integrated UV-Vis-NIR spectroscopy).

• Chirality Profile: Mixed-chirality, racemic distribution optimized for uniform bandgap thresholds.

• Outer Diameter: 1.0 nm - 2.0 nm

• Tube Length: 20 µm - 55 µm

 

Electrical & Physical Properties:

• Bandgap Range: ~0.8 eV - 1.1 eV.

• Mobility: High electron mobility as a result of the intrinsic 10000 cm2/Vs value of each nanotube.

 

Form Factor & Deposition:

• Supplied as a stable surfactant wrapped aqueous dispersion.

• Ready for immediate spin or dip coating of a variety of substrates.